Technische Details NE4210S01-T1B NEC
Description: RF MOSFET GAAS HJ-FET 2V SMD, Voltage - Rated: 4 V, Supplier Device Package: SMD, Noise Figure: 0.5dB, Technology: GaAs HJ-FET, Gain: 13dB, Frequency: 12GHz, Current Rating (Amps): 15mA, Package / Case: 4-SMD, Packaging: Tape & Reel (TR), Current - Test: 10 mA, Voltage - Test: 2 V.
Weitere Produktangebote NE4210S01-T1B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NE4210S01-T1B | CEL |
Description: RF MOSFET GAAS HJ-FET 2V SMD Voltage - Rated: 4 V Supplier Device Package: SMD Noise Figure: 0.5dB Technology: GaAs HJ-FET Gain: 13dB Frequency: 12GHz Current Rating (Amps): 15mA Package / Case: 4-SMD Packaging: Tape & Reel (TR) Current - Test: 10 mA Voltage - Test: 2 V |
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Im Einkaufswagen Stück im Wert von UAH |
| NE4210S01-T1B |
Hersteller: CEL
Description: RF MOSFET GAAS HJ-FET 2V SMD
Voltage - Rated: 4 V
Supplier Device Package: SMD
Noise Figure: 0.5dB
Technology: GaAs HJ-FET
Gain: 13dB
Frequency: 12GHz
Current Rating (Amps): 15mA
Package / Case: 4-SMD
Packaging: Tape & Reel (TR)
Current - Test: 10 mA
Voltage - Test: 2 V
Description: RF MOSFET GAAS HJ-FET 2V SMD
Voltage - Rated: 4 V
Supplier Device Package: SMD
Noise Figure: 0.5dB
Technology: GaAs HJ-FET
Gain: 13dB
Frequency: 12GHz
Current Rating (Amps): 15mA
Package / Case: 4-SMD
Packaging: Tape & Reel (TR)
Current - Test: 10 mA
Voltage - Test: 2 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH