NE68139-T1-A CEL
Hersteller: CEL
Description: SAME AS 2SC4094 NPN SILICON AMPL
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-143
Part Status: Obsolete
Description: SAME AS 2SC4094 NPN SILICON AMPL
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT-143
Part Status: Obsolete
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 3.52 EUR |
9000+ | 2.82 EUR |
15000+ | 2.46 EUR |
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Technische Details NE68139-T1-A CEL
Description: SAME AS 2SC4094 NPN SILICON AMPL, Packaging: Tape & Reel (TR), Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 15dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 65mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.2dB @ 1GHz, Supplier Device Package: SOT-143, Part Status: Obsolete.
Weitere Produktangebote NE68139-T1-A
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
NE68139-T1-A | Hersteller : CEL | RF Bipolar Transistors NPN High Frequency |
Produkt ist nicht verfügbar |