Technische Details NESG3031M14-T3-A NEC
Description: RF SMALL SIGNAL TRANSISTOR, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Gain: 7.5dB ~ 16dB, Power - Max: 150mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 4.3V, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 6mA, 2V, Noise Figure (dB Typ @ f): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz, Supplier Device Package: 4L2MM, M14, Part Status: Obsolete.
Weitere Produktangebote NESG3031M14-T3-A
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NESG3031M14-T3-A | Hersteller : Renesas Electronics America Inc |
 Description: RF SMALL SIGNAL TRANSISTORPackaging: Bulk Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Gain: 7.5dB ~ 16dB Power - Max: 150mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 4.3V DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 6mA, 2V Noise Figure (dB Typ @ f): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz Supplier Device Package: 4L2MM, M14 Part Status: Obsolete |
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