NGTB20N120IHLWG On Semiconductor
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Technische Details NGTB20N120IHLWG On Semiconductor
Description: IGBT 1200V 40A 192W TO247-3, Power - Max: 192 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 40 A, Part Status: Obsolete, Gate Charge: 200 nC, Test Condition: 600V, 20A, 10Ohm, 15V, Switching Energy: 700µJ (off), Td (on/off) @ 25°C: -/235ns, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote NGTB20N120IHLWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NGTB20N120IHLWG | onsemi |
 Description: IGBT 1200V 40A 192W TO247-3Power - Max: 192 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 40 A Part Status: Obsolete Gate Charge: 200 nC Test Condition: 600V, 20A, 10Ohm, 15V Switching Energy: 700µJ (off) Td (on/off) @ 25°C: -/235ns Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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Im Einkaufswagen Stück im Wert von UAH |
 |
NGTB20N120IHLWG | onsemi |
IGBT Transistors IGBT 1200V 20A FS1 Induction Heating |
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Im Einkaufswagen Stück im Wert von UAH |
| NGTB20N120IHLWG |
|
Hersteller: onsemi
Description: IGBT 1200V 40A 192W TO247-3
Power - Max: 192 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 200 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 700µJ (off)
Td (on/off) @ 25°C: -/235ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 1200V 40A 192W TO247-3
Power - Max: 192 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 200 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 700µJ (off)
Td (on/off) @ 25°C: -/235ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB20N120IHLWG |
|
Hersteller: onsemi
IGBT Transistors IGBT 1200V 20A FS1 Induction Heating
IGBT Transistors IGBT 1200V 20A FS1 Induction Heating
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH