NGTB30N120IHLWG ON Semiconductor

Description: IGBT 1200V 30A TO247, Power - Max: 260 W, Current - Collector Pulsed (Icm): 320 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 60 A, Part Status: Obsolete, Gate Charge: 420 nC, Test Condition: 600V, 30A, 10Ohm, 15V, Switching Energy: 1mJ (off), Td (on/off) @ 25°C: -/360ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.