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NGTB30N120IHSWG

NGTB30N120IHSWG onsemi


NGTB30N120IHSWG.pdf Hersteller: onsemi
Description: IGBT 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/210ns
Switching Energy: 1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
auf Bestellung 5392 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
153+4.73 EUR
Mindestbestellmenge: 153
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Technische Details NGTB30N120IHSWG onsemi

Description: IGBT 1200V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/210ns, Switching Energy: 1mJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 220 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 192 W.

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NGTB30N120IHSWG Hersteller : ONSEMI ONSM-S-A0013669774-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NGTB30N120IHSWG - IGBT, 1200V, 30A, TO-247-3
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5342 Stücke:
Lieferzeit 14-21 Tag (e)
NGTB30N120IHSWG NGTB30N120IHSWG Hersteller : ON Semiconductor ngtb30n120ihsw-d.pdf Trans IGBT Chip N-CH 1200V 60A 192000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
NGTB30N120IHSWG NGTB30N120IHSWG Hersteller : onsemi NGTB30N120IHSWG.pdf Description: IGBT 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/210ns
Switching Energy: 1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Produkt ist nicht verfügbar
NGTB30N120IHSWG NGTB30N120IHSWG Hersteller : ON Semiconductor NGTB30N120IHSW_D-1813126.pdf IGBT Transistors IGBT 1200V 30A FS1 Induction Heating
Produkt ist nicht verfügbar