NGTB30N60FWG onsemi
Hersteller: onsemi
Description: IGBT TRENCH 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 81ns/190ns
Switching Energy: 650µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 167 W
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Technische Details NGTB30N60FWG onsemi
Description: IGBT TRENCH 600V 60A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 72 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 81ns/190ns, Switching Energy: 650µJ (on), 650µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 170 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 167 W.
Weitere Produktangebote NGTB30N60FWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NGTB30N60FWG | ON Semiconductor |
|
auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NGTB30N60FWG |
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Hersteller: ON Semiconductor
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)

