NGTB30N60L2WG onsemi
Hersteller: onsemi
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 100ns/390ns
Switching Energy: 310µJ (on), 1.14mJ (off)
Test Condition: 300V, 30A, 30Ohm, 15V
Gate Charge: 166 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 225 W
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Technische Details NGTB30N60L2WG onsemi
Description: IGBT 600V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 100ns/390ns, Switching Energy: 310µJ (on), 1.14mJ (off), Test Condition: 300V, 30A, 30Ohm, 15V, Gate Charge: 166 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 225 W.
Weitere Produktangebote NGTB30N60L2WG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NGTB30N60L2WG | ON Semiconductor |
IGBT Transistors 600V 30A IGBT TO-247 |
auf Bestellung 531 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NGTB30N60L2WG |
|
Hersteller: ON Semiconductor
IGBT Transistors 600V 30A IGBT TO-247
IGBT Transistors 600V 30A IGBT TO-247
auf Bestellung 531 Stücke:
Lieferzeit 10-14 Tag (e)