Technische Details NGTB35N60FL2WG ON Semiconductor
Description: IGBT TRENCH/FS 600V 70A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 72ns/132ns, Switching Energy: 840µJ (on), 280µJ (off), Test Condition: 400V, 35A, 10Ohm, 15V, Gate Charge: 125 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 300 W.
Weitere Produktangebote NGTB35N60FL2WG
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NGTB35N60FL2WG | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB35N60FL2WG | Hersteller : onsemi |
Description: IGBT TRENCH/FS 600V 70A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 72ns/132ns Switching Energy: 840µJ (on), 280µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 125 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
Produkt ist nicht verfügbar |
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NGTB35N60FL2WG | Hersteller : onsemi |
IGBT Transistors 600V/35A FAST IGBT FSII T |
Produkt ist nicht verfügbar |