NGTB40N120LWG onsemi
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Part Status: Obsolete
Gate Charge: 420 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 5.5mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 140ns/360ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 260 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
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Technische Details NGTB40N120LWG onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247, Part Status: Obsolete, Gate Charge: 420 nC, Test Condition: 600V, 40A, 10Ohm, 15V, Switching Energy: 5.5mJ (on), 1.4mJ (off), Td (on/off) @ 25°C: 140ns/360ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 260 W, Current - Collector Pulsed (Icm): 320 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 80 A.
Weitere Produktangebote NGTB40N120LWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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NGTB40N120LWG | ON Semiconductor |
IGBT Transistors IGBT 1200V 40A FS1 Gen Mkt |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NGTB40N120LWG |
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Hersteller: ON Semiconductor
IGBT Transistors IGBT 1200V 40A FS1 Gen Mkt
IGBT Transistors IGBT 1200V 40A FS1 Gen Mkt
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

