NGTB40N120SWG

Hersteller: On Semiconductor
IGBT Chip N-CH 1200V 80A 535000mW TO-247 Транзистори

Hersteller: onsemi
Description: IGBT TRENCH 1200V 80A TO-247-3
Power - Max: 535 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 313 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 3.4mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C: 116ns/286ns
IGBT Type: Trench
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 240 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

Hersteller: onsemi
IGBT Transistors FSII 40A 1200V Welding