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NGTB40N65IHL2WG

NGTB40N65IHL2WG onsemi

ngtb40n65ihl2w-d.pdf Hersteller: onsemi
Description: IGBT TRENCH/FS 650V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/140ns
Switching Energy: 360µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 300 W
auf Bestellung 11225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
115+4.26 EUR
Mindestbestellmenge: 115
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Technische Details NGTB40N65IHL2WG onsemi

Description: IGBT TRENCH/FS 650V 80A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 465 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/140ns, Switching Energy: 360µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 135 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 300 W.

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NGTB40N65IHL2WG Hersteller : ON Semiconductor NGTB40N65IHL2W_D-1699786.pdf IGBT Transistors 650V/40A FAST IGBT FSII T
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Lieferzeit 14-28 Tag (e)
NGTB40N65IHL2WG NGTB40N65IHL2WG Hersteller : onsemi ngtb40n65ihl2w-d.pdf Description: IGBT TRENCH/FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/140ns
Switching Energy: 360µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 300 W
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