Technische Details NGTB40N65IHL2WG ON Semiconductor
Description: IGBT TRENCH FS 650V 80A TO-247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 465 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/140ns, Switching Energy: 360µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 135 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 300 W.
Weitere Produktangebote NGTB40N65IHL2WG nach Preis ab 3.74 EUR bis 5.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NGTB40N65IHL2WG | ON Semiconductor |
 Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 10325 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB40N65IHL2WG | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 465 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/140ns Switching Energy: 360µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 135 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 300 W |
auf Bestellung 10625 Stücke: Lieferzeit 10-14 Tag (e) |
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| NGTB40N65IHL2WG | ON Semiconductor |
IGBT Transistors 650V/40A FAST IGBT FSII T |
auf Bestellung 160 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NGTB40N65IHL2WG |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 10325 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 139+ | 4.71 EUR |
| 500+ | 4.39 EUR |
| 1000+ | 4.07 EUR |
| 10000+ | 3.74 EUR |
| NGTB40N65IHL2WG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/140ns
Switching Energy: 360µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 300 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/140ns
Switching Energy: 360µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 300 W
auf Bestellung 10625 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 5.31 EUR |
| NGTB40N65IHL2WG |
|
Hersteller: ON Semiconductor
IGBT Transistors 650V/40A FAST IGBT FSII T
IGBT Transistors 650V/40A FAST IGBT FSII T
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)