Technische Details NGTB50N120FL2WG ONN
Description: IGBT TRENCH FS 1200V 100A TO-247, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 100 A, Gate Charge: 311 nC, Test Condition: 600V, 50A, 10Ohm, 15V, Switching Energy: 4.4mJ (on), 1.4mJ (off), Td (on/off) @ 25°C: 118ns/282ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Reverse Recovery Time (trr): 256 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 535 W, Current - Collector Pulsed (Icm): 200 A.
Weitere Produktangebote NGTB50N120FL2WG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NGTB50N120FL2WG | On Semiconductor |
 IGBT 1200V 100A 535W TO247 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
NGTB50N120FL2WG | onsemi |
Description: IGBT TRENCH FS 1200V 100A TO-247 Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Gate Charge: 311 nC Test Condition: 600V, 50A, 10Ohm, 15V Switching Energy: 4.4mJ (on), 1.4mJ (off) Td (on/off) @ 25°C: 118ns/282ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Reverse Recovery Time (trr): 256 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 535 W Current - Collector Pulsed (Icm): 200 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NGTB50N120FL2WG | onsemi |
IGBT Transistors 1200V/50A FAST IGBT FSII |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NGTB50N120FL2WG |
|
Hersteller: On Semiconductor
IGBT 1200V 100A 535W TO247 Транзистори
IGBT 1200V 100A 535W TO247 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB50N120FL2WG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 100A TO-247
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 311 nC
Test Condition: 600V, 50A, 10Ohm, 15V
Switching Energy: 4.4mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 118ns/282ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Reverse Recovery Time (trr): 256 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 535 W
Current - Collector Pulsed (Icm): 200 A
Description: IGBT TRENCH FS 1200V 100A TO-247
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 311 nC
Test Condition: 600V, 50A, 10Ohm, 15V
Switching Energy: 4.4mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 118ns/282ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Reverse Recovery Time (trr): 256 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 535 W
Current - Collector Pulsed (Icm): 200 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB50N120FL2WG |
|
Hersteller: onsemi
IGBT Transistors 1200V/50A FAST IGBT FSII
IGBT Transistors 1200V/50A FAST IGBT FSII
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH