NGTG30N60FWG ON Semiconductor

Description: IGBT TRENCH 600V 60A TO-247-3, Power - Max: 167 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 60 A, Gate Charge: 170 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 650µJ (on), 650µJ (off), Td (on/off) @ 25°C: 81ns/190ns, IGBT Type: Trench, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.