| Anzahl | Preis |
|---|---|
| 7+ | 0.45 EUR |
| 11+ | 0.28 EUR |
| 50+ | 0.2 EUR |
| 100+ | 0.17 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.044 EUR |
| 6000+ | 0.042 EUR |
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Technische Details NHDTC144ET-QR Nexperia
Description: NHDTC144ET-Q/SOT23/TO-236AB, Resistors Included: R1 and R2, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 47 kOhms, Frequency - Transition: 170 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: TO-236AB, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote NHDTC144ET-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NHDTC144ET-QR | Hersteller : Nexperia USA Inc. |
Description: NHDTC144ET-Q/SOT23/TO-236AB Resistors Included: R1 and R2 Qualification: AEC-Q101 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 170 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: TO-236AB DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
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