NHUMD12F

NHUMD12F Nexperia USA Inc.


NHUMD3_2_12_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 100nA
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 170MHz, 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.088 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NHUMD12F Nexperia USA Inc.

Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 80V, Current - Collector (Ic) (Max): 100mA, Power - Max: 350mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Current - Collector Cutoff (Max): 100nA, Part Status: Active, Supplier Device Package: 6-TSSOP, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 170MHz, 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V.

Weitere Produktangebote NHUMD12F nach Preis ab 0.1 EUR bis 0.69 EUR

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NHUMD12F NHUMD12F Hersteller : Nexperia USA Inc. NHUMD3_2_12_SER.pdf Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 170MHz, 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
32+0.56 EUR
100+0.3 EUR
500+0.2 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH