NHUMD9F Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 170MHz, 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produktrezensionen
Produktbewertung abgeben
Technische Details NHUMD9F Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP, Part Status: Active, Supplier Device Package: 6-TSSOP, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 170MHz, 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 80V, Current - Collector (Ic) (Max): 100mA, Power - Max: 350mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NHUMD9F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
NHUMD9F | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOPPower - Max: 350mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 6-TSSOP Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 170MHz, 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 80V Current - Collector (Ic) (Max): 100mA |
Produkt ist nicht verfügbar |
|
|
NHUMD9F | Hersteller : Nexperia |
Bipolar Transistors - BJT 80 V, 100 mA NPN/PNP resistor-equipped double transistors |
Produkt ist nicht verfügbar |

