NHUMH13X Nexperia
Hersteller: Nexperia
Bipolar Transistors - BJT The factory is currently not accepting orders for this product.
| Anzahl | Preis |
|---|---|
| 6+ | 0.53 EUR |
| 10+ | 0.32 EUR |
| 50+ | 0.27 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.12 EUR |
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Technische Details NHUMH13X Nexperia
Description: TRANS PREBIAS 2NPN 80V 6-TSSOP, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: 6-TSSOP, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 170MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 80V, Current - Collector (Ic) (Max): 100mA, Power - Max: 350mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote NHUMH13X
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NHUMH13X | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN 80V 6-TSSOP Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 6-TSSOP Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 170MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 80V Current - Collector (Ic) (Max): 100mA Power - Max: 350mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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NHUMH13X | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN 80V 6-TSSOP Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 6-TSSOP Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 170MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 80V Current - Collector (Ic) (Max): 100mA Power - Max: 350mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |