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NJVMJB42CT4G

NJVMJB42CT4G onsemi

MJB41C-D.PDF Hersteller: onsemi
Bipolar Transistors - BJT BIP PNP 6A 100V TR
auf Bestellung 954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.34 EUR
10+2.15 EUR
100+1.45 EUR
500+1.31 EUR
800+1.03 EUR
2400+0.95 EUR
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Technische Details NJVMJB42CT4G onsemi

Description: TRANS PNP 100V 6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A, Current - Collector Cutoff (Max): 700µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: D2PAK, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 2 W.

Weitere Produktangebote NJVMJB42CT4G nach Preis ab 1.46 EUR bis 3.36 EUR

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NJVMJB42CT4G NJVMJB42CT4G Hersteller : onsemi mjb41c-d.pdf Description: TRANS PNP 100V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.15 EUR
100+1.46 EUR
Mindestbestellmenge: 6
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NJVMJB42CT4G Hersteller : ON Semiconductor mjb41c-d.pdf
auf Bestellung 750 Stücke:
Lieferzeit 21-28 Tag (e)
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NJVMJB42CT4G NJVMJB42CT4G Hersteller : onsemi mjb41c-d.pdf Description: TRANS PNP 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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NJVMJB42CT4G Hersteller : ONSEMI mjb41c-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; D2PAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: D2PAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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