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Technische Details NJVMJD122T4G-VF01 onsemi
Description: TRANS NPN DARL 100V 8A DPAK, Supplier Device Package: DPAK, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 4V @ 8A, 80mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 8 A, Part Status: Obsolete.
Weitere Produktangebote NJVMJD122T4G-VF01
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NJVMJD122T4G-VF01 | Hersteller : onsemi |
Description: TRANS NPN DARL 100V 8A DPAKSupplier Device Package: DPAK DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 4V @ 8A, 80mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 8 A Part Status: Obsolete |
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