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NJVMJD122T4G-VF01 onsemi


MJD122_D-1101608.pdf
Hersteller: onsemi
Darlington Transistors BIP DPAK NPN 8A 100V TR
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Technische Details NJVMJD122T4G-VF01 onsemi

Description: TRANS NPN DARL 100V 8A DPAK, Supplier Device Package: DPAK, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 4V @ 8A, 80mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 8 A, Part Status: Obsolete.

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NJVMJD122T4G-VF01 NJVMJD122T4G-VF01 Hersteller : onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Supplier Device Package: DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 8A, 80mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
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