NJVNJD35N04G ON Semiconductor
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Technische Details NJVNJD35N04G ON Semiconductor
Description: TRANS NPN DARL 350V 4A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V, Frequency - Transition: 90MHz, Supplier Device Package: DPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 45 W.
Weitere Produktangebote NJVNJD35N04G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NJVNJD35N04G | Hersteller : ON Semiconductor |
 Trans Darlington NPN 350V 4A 45000mW Automotive 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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NJVNJD35N04G | Hersteller : onsemi |
Description: TRANS NPN DARL 350V 4A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Frequency - Transition: 90MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 45 W |
Produkt ist nicht verfügbar |