NMSD200B01-7
Hersteller: auf Bestellung 10440 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details NMSD200B01-7
Description: MOSFET N-CH 60V 200MA SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SOT-363, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote NMSD200B01-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NMSD200B01-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
|
 |
NMSD200B01-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 200MA SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-363 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
NMSD200B01-7 | Hersteller : Diodes Incorporated |
MOSFETs ARRAY N-MOSFET AND SCHTKY DIO SOT-363 |
Produkt ist nicht verfügbar |