NP100N055PUK-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 100A TO263
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details NP100N055PUK-E1-AY Renesas Electronics Corporation
Description: MOSFET N-CH 55V 100A TO263, Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 176W (Tc), Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NP100N055PUK-E1-AY nach Preis ab 2.39 EUR bis 5.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NP100N055PUK-E1-AY | Renesas Electronics |
MOSFETs Nch Power MOSFET 55V 100A 3.25mohm TO-263 / D2PAK |
auf Bestellung 1580 Stücke: Lieferzeit 10-14 Tag (e) |
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NP100N055PUK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 55V 100A TO263FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.8W (Ta), 176W (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 1709 Stücke: Lieferzeit 10-14 Tag (e) |
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| NP100N055PUK-E1-AY | Renesas |
MP-25ZP/TO-263NCH, SINGLE, |
auf Bestellung 3 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NP100N055PUK-E1-AY |
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Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 55V 100A 3.25mohm TO-263 / D2PAK
MOSFETs Nch Power MOSFET 55V 100A 3.25mohm TO-263 / D2PAK
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.89 EUR |
| 10+ | 4.38 EUR |
| 25+ | 4.33 EUR |
| 100+ | 3.17 EUR |
| 500+ | 3.14 EUR |
| 800+ | 2.39 EUR |
| NP100N055PUK-E1-AY |
![]() |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 100A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 55V 100A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1709 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.93 EUR |
| 10+ | 4.41 EUR |
| 100+ | 3.17 EUR |
| NP100N055PUK-E1-AY |
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Hersteller: Renesas
MP-25ZP/TO-263NCH, SINGLE,MP-25ZP/TO-263, 55V, ID(DC)100A, Anzahl je Verpackung: 1 Stücke
MP-25ZP/TO-263NCH, SINGLE,
auf Bestellung 3 Stücke:
Lieferzeit 7-21 Tag (e)


