NP110N055PUJ-E1B-AY Renesas

Description: NP110N055PUJ-E1B-AY - SWITCHINGN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-263-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 288W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 55A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk.