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NP16N06YLL-E1-AY

NP16N06YLL-E1-AY Renesas Electronics Corporation

np16n06yll-60-v-16-n-channel-power-mos-fet-application-automotive Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 1.25W (Ta), 27.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 4779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.41 EUR
10+ 2.01 EUR
100+ 1.6 EUR
500+ 1.35 EUR
1000+ 1.15 EUR
Mindestbestellmenge: 8
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Technische Details NP16N06YLL-E1-AY Renesas Electronics Corporation

Description: ABU / MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V, Power Dissipation (Max): 1.25W (Ta), 27.3W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-HSON (5x5.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.

Weitere Produktangebote NP16N06YLL-E1-AY nach Preis ab 1.11 EUR bis 2.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NP16N06YLL-E1-AY NP16N06YLL-E1-AY Hersteller : Renesas Electronics REN_r07ds1124ej0100_pomosfet_DST_20131030-2930889.pdf MOSFET POWER TRS2 AUTOMOTIVE MOS 8P HSON(SINGLE
auf Bestellung 2477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.46 EUR
10+ 2.04 EUR
100+ 1.63 EUR
250+ 1.56 EUR
500+ 1.37 EUR
1000+ 1.17 EUR
2500+ 1.11 EUR
Mindestbestellmenge: 2
NP16N06YLL-E1-AY NP16N06YLL-E1-AY Hersteller : Renesas Electronics Corporation np16n06yll-60-v-16-n-channel-power-mos-fet-application-automotive Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 1.25W (Ta), 27.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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