NP32N055HLE-AZ NEC Corporation
Hersteller: NEC Corporation
Description: 32A, 55V, 0.033OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (MP-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: 32A, 55V, 0.033OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (MP-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
339+ | 1.45 EUR |
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Technische Details NP32N055HLE-AZ NEC Corporation
Description: 32A, 55V, 0.033OHM, N-CHANNEL ,, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V, Power Dissipation (Max): 1.2W (Ta), 66W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (MP-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NP32N055HLE-AZ | Hersteller : Renesas Electronics | MOSFET |
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