NP32N055SDE-E1-AZ Renesas
Hersteller: Renesas
Description: NP32N055SDE-E1-AZ - MOS FIELD EF
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (MP-3ZK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
| Anzahl | Preis |
|---|---|
| 281+ | 1.72 EUR |
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Technische Details NP32N055SDE-E1-AZ Renesas
Description: NP32N055SDE-E1-AZ - MOS FIELD EF, Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252 (MP-3ZK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), 66W (Tc).
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NP32N055SDE-E1-AZ | Hersteller : Renesas Electronics Corporation |
Description: TRANSISTOR Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 32A (Tc) |
Produkt ist nicht verfügbar |
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| NP32N055SDE-E1-AZ | Hersteller : Renesas Electronics |
MOSFET |
Produkt ist nicht verfügbar |