| Anzahl | Privatkunde |
|---|---|
| 310+ | 2.13 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.86 EUR |
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Technische Details NP32N055SDE-E1-AZ Renesas
Description: NP32N055SDE-E1-AZ - MOS FIELD EF, Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252 (MP-3ZK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), 66W (Tc).
Weitere Produktangebote NP32N055SDE-E1-AZ nach Preis ab 1.86 EUR bis 2.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| NP32N055SDE-E1-AZ | Renesas |
 NP32N055SDE-E1-AZ |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NP32N055SDE-E1-AZ | Renesas |
Description: NP32N055SDE-E1-AZ - MOS FIELD EF Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252 (MP-3ZK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.2W (Ta), 66W (Tc) |
auf Bestellung 3719 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NP32N055SDE-E1-AZ |
|
Hersteller: Renesas
NP32N055SDE-E1-AZ
NP32N055SDE-E1-AZ
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 310+ | 2.13 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.86 EUR |
| NP32N055SDE-E1-AZ |
|
Hersteller: Renesas
Description: NP32N055SDE-E1-AZ - MOS FIELD EF
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (MP-3ZK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Description: NP32N055SDE-E1-AZ - MOS FIELD EF
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (MP-3ZK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
auf Bestellung 3719 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 192+ | 2.87 EUR |