NP35N04YLG-E1-AY Renesas Electronics Corporation


np35n04ylg-data-sheet
Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.42 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Lieferzeit: 10-14 Tag (e)
Mindestmenge: 2500 Stücke
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Technische Details NP35N04YLG-E1-AY Renesas Electronics Corporation

Description: ABU / MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V, Power Dissipation (Max): 1W (Ta), 77W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-HSON (5x5.4), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NP35N04YLG-E1-AY nach Preis ab 1.33 EUR bis 4.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NP35N04YLG-E1-AY NP35N04YLG-E1-AY Renesas Electronics REN_r07ds0182ej0100_pomosfet_DST_20101022.pdf MOSFETs Nch Power MOSFET 40V 35A 9.7mohm SON-8 5x6
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.06 EUR
10+2.56 EUR
100+1.98 EUR
250+1.96 EUR
500+1.59 EUR
1000+1.44 EUR
2500+1.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NP35N04YLG-E1-AY NP35N04YLG-E1-AY Renesas Electronics Corporation np35n04ylg-data-sheet Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4855 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.99 EUR
10+3.2 EUR
100+2.19 EUR
500+1.76 EUR
1000+1.62 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP35N04YLG-E1-AY REN_r07ds0182ej0100_pomosfet_DST_20101022.pdf
Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 40V 35A 9.7mohm SON-8 5x6
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.06 EUR
10+2.56 EUR
100+1.98 EUR
250+1.96 EUR
500+1.59 EUR
1000+1.44 EUR
2500+1.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NP35N04YLG-E1-AY np35n04ylg-data-sheet
Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4855 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
10+3.2 EUR
100+2.19 EUR
500+1.76 EUR
1000+1.62 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH