NP35N04YLG-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: 8-HSON (5x5.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta), 77W (Tc)
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Technische Details NP35N04YLG-E1-AY Renesas Electronics Corporation
Description: ABU / MOSFET, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: 8-HSON (5x5.4), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1W (Ta), 77W (Tc).
Weitere Produktangebote NP35N04YLG-E1-AY nach Preis ab 1.33 EUR bis 4.99 EUR
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NP35N04YLG-E1-AY | Renesas Electronics |
MOSFETs Nch Power MOSFET 40V 35A 9.7mohm SON-8 5x6 |
auf Bestellung 2495 Stücke: Lieferzeit 10-14 Tag (e) |
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NP35N04YLG-E1-AY | Renesas Electronics Corporation |
Description: ABU / MOSFET Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: 8-HSON (5x5.4) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1W (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) |
auf Bestellung 4855 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NP35N04YLG-E1-AY |
|
Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 40V 35A 9.7mohm SON-8 5x6
MOSFETs Nch Power MOSFET 40V 35A 9.7mohm SON-8 5x6
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.06 EUR |
| 10+ | 2.56 EUR |
| 100+ | 1.98 EUR |
| 250+ | 1.96 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.44 EUR |
| 2500+ | 1.33 EUR |
| NP35N04YLG-E1-AY |
|
Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: 8-HSON (5x5.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Description: ABU / MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: 8-HSON (5x5.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
auf Bestellung 4855 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.99 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.19 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.62 EUR |