NP36P04KDG-E1-AY Renesas Electronics
auf Bestellung 1600 Stücke:
Lieferzeit 136-140 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.71 EUR |
| 10+ | 3.20 EUR |
| 100+ | 2.57 EUR |
| 250+ | 2.46 EUR |
| 500+ | 2.13 EUR |
| 800+ | 1.69 EUR |
| 4800+ | 1.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NP36P04KDG-E1-AY Renesas Electronics
Description: MOSFET P-CH 40V 36A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V, Power Dissipation (Max): 1.8W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NP36P04KDG-E1-AY
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NP36P04KDG-E1-AY | Hersteller : Renesas |
 TO263AB/36 A, 40 V, 0.0235 ohm, P-CHANNEL, Si, POWER, MOSFET NP36P04Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
||
 |
NP36P04KDG-E1-AY | Hersteller : Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 36A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V Power Dissipation (Max): 1.8W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
|
|
NP36P04KDG-E1-AY | Hersteller : Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 36A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V Power Dissipation (Max): 1.8W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |