NP40N10VDF-E1-AY Renesas
auf Bestellung 1559 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 670+ | 0.84 EUR |
| 1000+ | 0.76 EUR |
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Technische Details NP40N10VDF-E1-AY Renesas
Description: MOSFET N-CH 100V 40A TO252, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Power Dissipation (Max): 1.2W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (MP-3ZP), Part Status: Obsolete, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NP40N10VDF-E1-AY nach Preis ab 0.97 EUR bis 0.97 EUR
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NP40N10VDF-E1-AY | Hersteller : Renesas Electronics Corporation |
 Description: MOSFET N-CH 100V 40A TO252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZP) Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1559 Stücke: Lieferzeit 10-14 Tag (e) |
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NP40N10VDF-E1-AY | Hersteller : Renesas |
Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) MP-3ZP T/R |
Produkt ist nicht verfügbar |
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| NP40N10VDF-E1-AY | Hersteller : Renesas |
TO-252/40 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET NP40N10 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |