NP45N06PUK-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO263
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details NP45N06PUK-E1-AY Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO263, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.2W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote NP45N06PUK-E1-AY nach Preis ab 1.63 EUR bis 5.49 EUR
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NP45N06PUK-E1-AY | Renesas Electronics |
MOSFETs POWER DEVICE E AUTO MOS MP-25LZP ANL2 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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NP45N06PUK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 45A TO263 Qualification: AEC-Q101 Grade: Automotive Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Supplier Device Package: TO-263-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.2W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 6401 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NP45N06PUK-E1-AY |
|
Hersteller: Renesas Electronics
MOSFETs POWER DEVICE E AUTO MOS MP-25LZP ANL2
MOSFETs POWER DEVICE E AUTO MOS MP-25LZP ANL2
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.49 EUR |
| 250+ | 2.37 EUR |
| 500+ | 2.09 EUR |
| 800+ | 1.69 EUR |
| 4800+ | 1.63 EUR |
| NP45N06PUK-E1-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO263
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 60V 45A TO263
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 6401 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 3.55 EUR |
| 100+ | 2.44 EUR |