NP45N06VDK-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO252
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (MP-3ZP)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
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Technische Details NP45N06VDK-E1-AY Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO252, Qualification: AEC-Q101, Grade: Automotive, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252 (MP-3ZP), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 23A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C.
Weitere Produktangebote NP45N06VDK-E1-AY nach Preis ab 1.13 EUR bis 3.77 EUR
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NP45N06VDK-E1-AY | Renesas Electronics |
MOSFETs POWER DEVICE E AUTO MOS MP-25LZP ANL2 |
auf Bestellung 4892 Stücke: Lieferzeit 10-14 Tag (e) |
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NP45N06VDK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 45A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (MP-3ZP) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.2W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 7340 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NP45N06VDK-E1-AY |
|
Hersteller: Renesas Electronics
MOSFETs POWER DEVICE E AUTO MOS MP-25LZP ANL2
MOSFETs POWER DEVICE E AUTO MOS MP-25LZP ANL2
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.84 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.26 EUR |
| 2500+ | 1.19 EUR |
| 5000+ | 1.13 EUR |
| NP45N06VDK-E1-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (MP-3ZP)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 45A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (MP-3ZP)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 7340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.77 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.23 EUR |