NP45N06VUK-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Power Dissipation (Max): 1.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.13 EUR |
| 7500+ | 1.02 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NP45N06VUK-E1-AY Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V, Power Dissipation (Max): 1.8W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NP45N06VUK-E1-AY nach Preis ab 1.15 EUR bis 4.21 EUR
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NP45N06VUK-E1-AY | Renesas Electronics |
MOSFETs Nch Power MOSFET 60V 45A 9.6mohm TO-252 / DPAK |
auf Bestellung 2007 Stücke: Lieferzeit 10-14 Tag (e) |
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NP45N06VUK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 45A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V Power Dissipation (Max): 1.8W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 12122 Stücke: Lieferzeit 10-14 Tag (e) |
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| NP45N06VUK-E1-AY |
|
Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 60V 45A 9.6mohm TO-252 / DPAK
MOSFETs Nch Power MOSFET 60V 45A 9.6mohm TO-252 / DPAK
auf Bestellung 2007 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.19 EUR |
| 10+ | 2.05 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.36 EUR |
| 2500+ | 1.15 EUR |
| NP45N06VUK-E1-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Power Dissipation (Max): 1.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Power Dissipation (Max): 1.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.21 EUR |
| 10+ | 2.7 EUR |
| 50+ | 2.03 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.45 EUR |