NP50P04SLG-E1-AY

NP50P04SLG-E1-AY Renesas Electronics Corporation


np50p04slg-data-sheet Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.76 EUR
Mindestbestellmenge: 2500
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Technische Details NP50P04SLG-E1-AY Renesas Electronics Corporation

Description: MP-3ZK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V, Power Dissipation (Max): 1.2W (Ta), 84W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (MP-3ZK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V.

Weitere Produktangebote NP50P04SLG-E1-AY nach Preis ab 1.76 EUR bis 4.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NP50P04SLG-E1-AY NP50P04SLG-E1-AY Hersteller : Renesas Electronics Corporation np50p04slg-data-sheet Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
auf Bestellung 3965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.91 EUR
10+ 3.25 EUR
100+ 2.59 EUR
500+ 2.19 EUR
1000+ 1.86 EUR
Mindestbestellmenge: 5
NP50P04SLG-E1-AY NP50P04SLG-E1-AY Hersteller : Renesas Electronics r07ds0241ej0101_np50p04slg-3075714.pdf MOSFET POWER TRS2
auf Bestellung 2500 Stücke:
Lieferzeit 136-140 Tag (e)
Anzahl Preis ohne MwSt
1+4.01 EUR
10+ 3.59 EUR
100+ 2.89 EUR
500+ 2.38 EUR
1000+ 1.97 EUR
2500+ 1.83 EUR
5000+ 1.76 EUR