NP50P04SLG-E1-AY

NP50P04SLG-E1-AY Renesas Electronics Corporation


np50p04slg-datasheet?r=499776 Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.60 EUR
Mindestbestellmenge: 2500
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Technische Details NP50P04SLG-E1-AY Renesas Electronics Corporation

Description: MP-3ZK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V, Power Dissipation (Max): 1.2W (Ta), 84W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (MP-3ZK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NP50P04SLG-E1-AY nach Preis ab 1.78 EUR bis 3.98 EUR

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NP50P04SLG-E1-AY NP50P04SLG-E1-AY Hersteller : Renesas Electronics Corporation np50p04slg-datasheet?r=499776 Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+3.27 EUR
100+2.37 EUR
500+2.00 EUR
1000+1.93 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NP50P04SLG-E1-AY NP50P04SLG-E1-AY Hersteller : Renesas Electronics r07ds0241ej0101_np50p04slg-3075714.pdf MOSFETs POWER TRS2
auf Bestellung 2393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.98 EUR
10+3.31 EUR
100+2.64 EUR
250+2.52 EUR
500+2.22 EUR
1000+1.90 EUR
2500+1.78 EUR
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