NP74N04YUG-E1-AY

NP74N04YUG-E1-AY Renesas Electronics Corporation


np74n04yug-data-sheet Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.37 EUR
5000+ 1.32 EUR
Mindestbestellmenge: 2500
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Technische Details NP74N04YUG-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 40V 75A 8HSON, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V, Power Dissipation (Max): 1W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-HSON, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V.

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NP74N04YUG-E1-AY NP74N04YUG-E1-AY Hersteller : Renesas Electronics Corporation np74n04yug-data-sheet Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
NP74N04YUG-E1-AY NP74N04YUG-E1-AY Hersteller : Renesas Electronics REN_r07ds0017ej0100_pomosfet_DST_20100701-1998788.pdf MOSFET AUTOMOTIVE MOS 8P HSON(SINGLE) UMOS4
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