NP88N055KHE-E1-AY Renesas
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 6.14 EUR |
| 100+ | 5.62 EUR |
| 500+ | 5.12 EUR |
| 1000+ | 4.67 EUR |
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Technische Details NP88N055KHE-E1-AY Renesas
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A, Rds On (Max) @ Id, Vgs: 3.9mOhm @ 44A, 10V, Power Dissipation (Max): 1.8W (Ta), 288W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V.
Weitere Produktangebote NP88N055KHE-E1-AY nach Preis ab 5.12 EUR bis 6.24 EUR
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NP88N055KHE-E1-AY | Hersteller : Renesas |
 Trans MOSFET N-CH 55V 88A Automotive 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 718 Stücke: Lieferzeit 14-21 Tag (e) |
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NP88N055KHE-E1-AY | Hersteller : Renesas Electronics Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A Rds On (Max) @ Id, Vgs: 3.9mOhm @ 44A, 10V Power Dissipation (Max): 1.8W (Ta), 288W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V |
auf Bestellung 2318 Stücke: Lieferzeit 10-14 Tag (e) |
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NP88N055KHE-E1-AY | Hersteller : Renesas |
Trans MOSFET N-CH 55V 88A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |