NP89N04PDK-E1-AY Renesas Electronics America Inc
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 40V 90A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 800+ | 2.26 EUR |
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Technische Details NP89N04PDK-E1-AY Renesas Electronics America Inc
Description: MOSFET N-CH 40V 90A TO263-3, Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 147W (Tc), Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote NP89N04PDK-E1-AY nach Preis ab 2.75 EUR bis 3.82 EUR
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NP89N04PDK-E1-AY | Renesas Electronics America Inc |
Description: MOSFET N-CH 40V 90A TO263-3 Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C |
auf Bestellung 1584 Stücke: Lieferzeit 10-14 Tag (e) |
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| NP89N04PDK-E1-AY |
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Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 40V 90A TO263-3
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Description: MOSFET N-CH 40V 90A TO263-3
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
auf Bestellung 1584 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.82 EUR |
| 10+ | 3.42 EUR |
| 100+ | 2.75 EUR |