NP90N03VLG-E1-AY

NP90N03VLG-E1-AY Renesas Electronics Corporation


np90n03vlg-data-sheet
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 90A TO252
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
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Technische Details NP90N03VLG-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 30V 90A TO252, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 45A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), 105W (Tc).

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NP90N03VLG-E1-AY NP90N03VLG-E1-AY Renesas Electronics r07ds0129ej0100_pomosfet-1091131.pdf MOSFET Single MOSFET, Pch SC-95/SOT-6
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NP90N03VLG-E1-AY r07ds0129ej0100_pomosfet-1091131.pdf
NP90N03VLG-E1-AY
Hersteller: Renesas Electronics
MOSFET Single MOSFET, Pch SC-95/SOT-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH