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NP90N04VUK-E1-AY

NP90N04VUK-E1-AY Renesas Electronics Corporation

np90n04vukmos-field-effect-transistor Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.52 EUR
Mindestbestellmenge: 2500
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Technische Details NP90N04VUK-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 40V 90A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V, Power Dissipation (Max): 1.2W (Ta), 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V.

Weitere Produktangebote NP90N04VUK-E1-AY nach Preis ab 1.6 EUR bis 3.36 EUR

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Preis ohne MwSt
NP90N04VUK-E1-AY NP90N04VUK-E1-AY Hersteller : Renesas Electronics Corporation np90n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
auf Bestellung 7414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.36 EUR
10+ 2.79 EUR
100+ 2.22 EUR
500+ 1.88 EUR
1000+ 1.6 EUR
Mindestbestellmenge: 6
NP90N04VUK-E1-AY NP90N04VUK-E1-AY Hersteller : Renesas Electronics REN_r07ds0577ej0200_pomosfet_DST_20180524-2930628.pdf MOSFET POWER DEVICE E AUTOMOTIVE MOS MP-3ZP
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