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Technische Details NPTB00004B MACOM
Description: RF MOSFET HEMT 28V 8SOIC, Current - Test: 50 mA, Voltage - Test: 28 V, Voltage - Rated: 100 V, Supplier Device Package: 8-SOIC-EP, Technology: GaN HEMT, Gain: 14.8dB, Power - Output: 5W, Configuration: N-Channel, Frequency: 0Hz ~ 6GHz, Mounting Type: Surface Mount, Current Rating (Amps): 1.4A, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tube.
Weitere Produktangebote NPTB00004B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| NPTB00004B | MACOM Technology Solutions |
Description: RF MOSFET HEMT 28V 8SOIC Current - Test: 50 mA Voltage - Test: 28 V Voltage - Rated: 100 V Supplier Device Package: 8-SOIC-EP Technology: GaN HEMT Gain: 14.8dB Power - Output: 5W Configuration: N-Channel Frequency: 0Hz ~ 6GHz Mounting Type: Surface Mount Current Rating (Amps): 1.4A Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NPTB00004B |
Hersteller: MACOM Technology Solutions
Description: RF MOSFET HEMT 28V 8SOIC
Current - Test: 50 mA
Voltage - Test: 28 V
Voltage - Rated: 100 V
Supplier Device Package: 8-SOIC-EP
Technology: GaN HEMT
Gain: 14.8dB
Power - Output: 5W
Configuration: N-Channel
Frequency: 0Hz ~ 6GHz
Mounting Type: Surface Mount
Current Rating (Amps): 1.4A
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
Description: RF MOSFET HEMT 28V 8SOIC
Current - Test: 50 mA
Voltage - Test: 28 V
Voltage - Rated: 100 V
Supplier Device Package: 8-SOIC-EP
Technology: GaN HEMT
Gain: 14.8dB
Power - Output: 5W
Configuration: N-Channel
Frequency: 0Hz ~ 6GHz
Mounting Type: Surface Mount
Current Rating (Amps): 1.4A
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH