NRVFES6G onsemi
Hersteller: onsemi
Description: DIODE GEN PURP 400V 6A TO277-3
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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Technische Details NRVFES6G onsemi
Description: DIODE GEN PURP 400V 6A TO277-3, Current - Reverse Leakage @ Vr: 2 µA @ 400 V, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-277-3, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 45 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NRVFES6G nach Preis ab 0.65 EUR bis 1.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NRVFES6G | onsemi |
Description: DIODE GEN PURP 400V 6A TO277-3 Current - Reverse Leakage @ Vr: 2 µA @ 400 V Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 45 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NRVFES6G |
|
Hersteller: onsemi
Description: DIODE GEN PURP 400V 6A TO277-3
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 400V 6A TO277-3
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.67 EUR |
| 12+ | 1.48 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.72 EUR |
| 2000+ | 0.65 EUR |