NRVHP8H200MFDT1G ON Semiconductor
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details NRVHP8H200MFDT1G ON Semiconductor
Description: DIODE ARRAY GP 200V 4A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 4A, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Qualification: AEC-Q101.
Weitere Produktangebote NRVHP8H200MFDT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NRVHP8H200MFDT1G | Hersteller : ON Semiconductor |
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auf Bestellung 1495 Stücke: Lieferzeit 21-28 Tag (e) |
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NRVHP8H200MFDT1G | Hersteller : onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
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