Technische Details NRVHPM220T3G ON Semiconductor
Description: DIODE GEN PURP 200V 2A POWERMITE, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: Powermite, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V.
Weitere Produktangebote NRVHPM220T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NRVHPM220T3G | Hersteller : ONSEMI |
 NRVHPM220T3G SMD universal diodes |
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NRVHPM220T3G | Hersteller : onsemi |
Description: DIODE GEN PURP 200V 2A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
Produkt ist nicht verfügbar |
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NRVHPM220T3G | Hersteller : onsemi |
Description: DIODE GEN PURP 200V 2A POWERMITE Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
Produkt ist nicht verfügbar |