NSBA113EDXV6T1
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auf Bestellung 44000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details NSBA113EDXV6T1
Description: TRANS 2PNP PREBIAS 0.5W SOT563, Supplier Device Package: SOT-563, Resistor - Emitter Base (R2): 1kOhms, Resistor - Base (R1): 1kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSBA113EDXV6T1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NSBA113EDXV6T1 | onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 1kOhms Resistor - Base (R1): 1kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSBA113EDXV6T1 |
|
Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 1kOhms
Resistor - Base (R1): 1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 1kOhms
Resistor - Base (R1): 1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH