NSBA114YDXV6T1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT563
Part Status: Active
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.24 EUR |
| 8000+ | 0.23 EUR |
| 12000+ | 0.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSBA114YDXV6T1G onsemi
Description: TRANS PREBIAS 2PNP 50V SOT563, Part Status: Active, Supplier Device Package: SOT-563, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 10kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSBA114YDXV6T1G nach Preis ab 0.11 EUR bis 1.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NSBA114YDXV6T1G | onsemi |
Digital Transistors 100mA 50V Dual PNP |
auf Bestellung 1167 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBA114YDXV6T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT563 Part Status: Active Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBA114YDXV6T1G | ONSEMI |
Description: ONSEMI - NSBA114YDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 235650 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBA114YDXV6T1G | ON Semiconductor |
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auf Bestellung 7990 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSBA114YDXV6T1G |
|
Hersteller: onsemi
Digital Transistors 100mA 50V Dual PNP
Digital Transistors 100mA 50V Dual PNP
auf Bestellung 1167 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.82 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.24 EUR |
| 1000+ | 0.14 EUR |
| 8000+ | 0.12 EUR |
| 24000+ | 0.11 EUR |
| NSBA114YDXV6T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT563
Part Status: Active
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2PNP 50V SOT563
Part Status: Active
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 26+ | 0.81 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.24 EUR |
| NSBA114YDXV6T1G |
|
Hersteller: ONSEMI
Description: ONSEMI - NSBA114YDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - NSBA114YDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 235650 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.14 EUR |
| NSBA114YDXV6T1G |
|
Hersteller: ON Semiconductor
auf Bestellung 7990 Stücke:
Lieferzeit 21-28 Tag (e)