NSBC114TPDXV6T1G onsemi
Hersteller: onsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.11 EUR |
| 8000+ | 0.1 EUR |
| 12000+ | 0.095 EUR |
| 20000+ | 0.089 EUR |
| 28000+ | 0.085 EUR |
| 40000+ | 0.082 EUR |
| 100000+ | 0.074 EUR |
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Technische Details NSBC114TPDXV6T1G onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Supplier Device Package: SOT-563.
Weitere Produktangebote NSBC114TPDXV6T1G nach Preis ab 0.1 EUR bis 0.64 EUR
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NSBC114TPDXV6T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
auf Bestellung 202500 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC114TPDXV6T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC114TPDXV6T1G | Hersteller : onsemi |
Digital Transistors 100mA Complementary 50V Dual NPN & PNP |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TPDXV6T1G | Hersteller : ONSEMI |
Description: ONSEMI - NSBC114TPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 102500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114TPDXV6T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 160...350 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ |
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