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NSBC114TPDXV6T1G

NSBC114TPDXV6T1G onsemi

dtc114yp-d.pdf
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.13 EUR
8000+0.12 EUR
12000+0.11 EUR
20000+0.11 EUR
28000+0.1 EUR
40000+0.098 EUR
100000+0.088 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
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Technische Details NSBC114TPDXV6T1G onsemi

Description: TRANS PREBIAS 1NPN 1PNP SOT-563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Supplier Device Package: SOT-563.

Weitere Produktangebote NSBC114TPDXV6T1G nach Preis ab 0.12 EUR bis 0.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NSBC114TPDXV6T1G NSBC114TPDXV6T1G onsemi dtc114yp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 202500 Stücke:
Lieferzeit 10-14 Tag (e)
1872+0.29 EUR
Mindestbestellmenge: 1872 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G NSBC114TPDXV6T1G onsemi dtc114yp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.65 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G NSBC114TPDXV6T1G onsemi DTC114TP-D.PDF Digital Transistors 100mA Complementary 50V Dual NPN & PNP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.76 EUR
10+0.67 EUR
2000+0.44 EUR
4000+0.12 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G ONSEMI ONSMS25253-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - NSBC114TPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 102500 Stücke:
Lieferzeit 14-21 Tag (e)
8000+0.14 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G dtc114yp-d.pdf
NSBC114TPDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 202500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1872+0.29 EUR
Mindestbestellmenge: 1872 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G dtc114yp-d.pdf
NSBC114TPDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G DTC114TP-D.PDF
NSBC114TPDXV6T1G
Hersteller: onsemi
Digital Transistors 100mA Complementary 50V Dual NPN & PNP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.76 EUR
10+0.67 EUR
2000+0.44 EUR
4000+0.12 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G ONSMS25253-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Description: ONSEMI - NSBC114TPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 102500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8000+0.14 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH