NSBC123TF3T5G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
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Technische Details NSBC123TF3T5G onsemi
Description: TRANS PREBIAS NPN 50V SOT1123, Resistor - Base (R1): 2.2 kOhms, Power - Max: 254 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-1123, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-1123, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSBC123TF3T5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NSBC123TF3T5G | ON Semiconductor |
Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRANSISTOR |
auf Bestellung 5520 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSBC123TF3T5G |
|
Hersteller: ON Semiconductor
Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRANSISTOR
Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRANSISTOR
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)