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NSBC124EPDXV6T1

NSBC124EPDXV6T1 onsemi


NSBC114EPDXV6T1%2C5_Series.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
auf Bestellung 211695 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6662+0.081 EUR
Mindestbestellmenge: 6662
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Technische Details NSBC124EPDXV6T1 onsemi

Description: TRANS PREBIAS NPN/PNP SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SOT-563.

Weitere Produktangebote NSBC124EPDXV6T1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSBC124EPDXV6T1 Hersteller : ON NSBC114EPDXV6T1%2C5_Series.pdf
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
NSBC124EPDXV6T1 NSBC124EPDXV6T1 Hersteller : onsemi NSBC114EPDXV6T1%2C5_Series.pdf Description: TRANS PREBIAS NPN/PNP SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
NSBC124EPDXV6T1 NSBC124EPDXV6T1 Hersteller : onsemi NSBC114EPDXV6T1%2C5_Series.pdf Description: TRANS PREBIAS NPN/PNP SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar