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NSBC143EDXV6T1G

NSBC143EDXV6T1G onsemi

dtc143ed-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
auf Bestellung 44000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.12 EUR
12000+ 0.1 EUR
Mindestbestellmenge: 4000
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Technische Details NSBC143EDXV6T1G onsemi

Description: TRANS PREBIAS 2NPN 50V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: SOT-563.

Weitere Produktangebote NSBC143EDXV6T1G nach Preis ab 0.095 EUR bis 0.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSBC143EDXV6T1G NSBC143EDXV6T1G Hersteller : onsemi DTC143ED_D-2311082.pdf Digital Transistors 100mA 50V Dual NPN
auf Bestellung 29944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.69 EUR
10+ 0.48 EUR
100+ 0.2 EUR
1000+ 0.12 EUR
8000+ 0.1 EUR
24000+ 0.095 EUR
Mindestbestellmenge: 5
NSBC143EDXV6T1G NSBC143EDXV6T1G Hersteller : onsemi dtc143ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
auf Bestellung 47000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 26
NSBC143EDXV6T1G NSBC143EDXV6T1G Hersteller : ON Semiconductor nsbc114edxv6-d.pdf Trans Digital BJT NPN 50V 100mA 500mW 6-Pin SOT-563 T/R
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