NSBC143TPDXV6T1G onsemi
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.82 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.24 EUR |
| 1000+ | 0.14 EUR |
| 8000+ | 0.12 EUR |
| 24000+ | 0.11 EUR |
| 48000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSBC143TPDXV6T1G onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563, Supplier Device Package: SOT-563, Resistor - Base (R1): 4.7kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSBC143TPDXV6T1G nach Preis ab 0.14 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NSBC143TPDXV6T1G | onsemi |
 Description: TRANS PREBIAS NPN/PNP 50V SOT563DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: SOT-563 Resistor - Base (R1): 4.7kOhms |
auf Bestellung 3926 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC143TPDXV6T1G | ONSEMI |
Description: ONSEMI - NSBC143TPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4771144 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC143TPDXV6T1G |
|
auf Bestellung 716 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSBC143TPDXV6T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Resistor - Base (R1): 4.7kOhms
Description: TRANS PREBIAS NPN/PNP 50V SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Resistor - Base (R1): 4.7kOhms
auf Bestellung 3926 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 37+ | 0.57 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.14 EUR |
| NSBC143TPDXV6T1G |
|
Hersteller: ONSEMI
Description: ONSEMI - NSBC143TPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - NSBC143TPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4771144 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.14 EUR |
| NSBC143TPDXV6T1G |
|
auf Bestellung 716 Stücke:
Lieferzeit 21-28 Tag (e)